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Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy

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8 Author(s)
Zhao, H. ; National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 100083, People’s Republic of China ; Xu, Y.Q. ; Ni, H.Q. ; Zhang, S.Y.
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Effect of rapid thermal annealing on photoluminescence (PL) properties of InGaAs, InGaNAs, InGaAsSb, and InGaNAsSb quantum wells (QWs) grown by molecular-beam epitaxy was systematically investigated. Variations of PL intensity and full width at half maximum were recorded from the samples annealed at different conditions. The PL peak intensities of InGaAs and InGaNAs QWs initially increase and then decrease when the annealing temperature increased from 600 to 900 °C, but the drawing lines of InGaAsSb and InGaNAsSb take on an “M” shape. The enhancement of the PL intensity and the decrease of the full width at half maximum in our samples are likely due to the removal of defects and dislocations as well as the composition’s homogenization. In the 800–900 °C high-temperature region, interdiffusion is likely the main factor influencing the PL intensity. In–N is easily formed during annealing which will prevent In out diffusion, so the largest blueshift was observed in InGaAsSb in the high-temperature region.

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Journal of Applied Physics  (Volume:99 ,  Issue: 3 )