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Kinetics of low-temperature activation of acceptors in magnesium-doped gallium nitride epilayers grown by metal-organic vapor-phase epitaxy

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6 Author(s)
Litwin-Staszewska, E. ; Institute of High Pressures Physics, Polish Academy of Sciences, 29/37 Sokołowska Street, 01-142 Warsaw, Poland ; Piotrzkowski, R. ; Dmowski, L. ; Prystawko, P.
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The annealing process of magnesium-doped gallium nitride (GaN:Mg) epilayers grown by metal-organic vapor-phase epitaxy was investigated by in situ measurements of electrical transport properties. The resistivity ρ and the Hall effect were studied as functions of time and temperature in the range of 20–600 °C. A time-dependent p-type conductivity was observed at temperatures as low as 350 °C. Activation energy of about Eact=1.5 eV was found for the magnesium acceptor (Mg) from the isothermal measurements of ρ(t) kinetics in the range of 350–550 °C. This value corresponds well to the theoretical prediction for the thermal dissociation of magnesium-hydrogen complexes (MgH). The annealing at temperatures higher than 600 °C leads obviously to the activation of Mg acceptors, but the final resistivity of the sample is higher than the result obtained after annealing at 520 °C. The ionization energy of electrically active Mg acceptor level of about EA=170 meV was found from the temperature dependences of the resistivity ρ(T).

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 3 )