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Structural characterization of a-plane Zn1-xCdxO (0≤x≤0.085) thin films grown by metal-organic vapor phase epitaxy

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7 Author(s)
Zuniga-Perez, J. ; Departamento de Física Aplicada y Electromagnetismo, Universitat de València, C/ Dr. Moliner 50, 46100 Burjassot, Spain ; Munoz-Sanjose, V. ; Lorenz, M. ; Benndorf, G.
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Zn1-xCdxO(1120) films have been grown on (0112) sapphire (r–plane) substrates by metal-organic vapor phase epitaxy. A 800-nm-thick ZnO buffer, deposited prior to the alloy growth, helps to prevent the formation of pure CdO. A maximum uniform Cd incorporation of 8.5 at. % has been determined by Rutherford backscattering spectrometry. Higher Cd contents lead to the coexistence of Zn1-xCdxO alloys of different compositions within the same film. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.93 eV for the highest Cd concentration (8.5 at. %). The lattice deformation, due to Cd incorporation, has been described using a new reference frame in which the lattice distortions are directly related to the a-plane surface structure. Cd introduction does not affect the c lattice parameter but expands the lattice along the two perpendicular directions, [1120] and [1100], resulting in a quadratic volume increase.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 2 )