IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Journal of Applied Physics ...> Volume:99 Issue:11 Help

Comparison of organic diode structures regarding high-frequency rectification behavior in radio-frequency identification tags

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Steudel, Soeren ; IMEC, Polymer and Molecular Electronics, Kapeldreef 75, 3001 Leuven, Belgium ; De Vusser, Stijn ; Myny, Kris ; Lenes, Martijn
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2202243 

In this article, we compare the direct current (dc) and high-frequency performance of two different organic diode structures, a vertical diode and an organic field effect transistor (OTFT) with shorted drain-gate contact, regarding their application in a rectifying circuit. For this purpose, we fabricated both diode structures using the organic semiconductor pentacene. dc measurements were performed showing a space-charge-limited current mobility of more than 0.1 cm2/V s for the vertical diode and a field effect mobility of 0.8 cm2/V s for the OTFT with shorted source-drain. High-frequency measurements of those diode structures in a rectifier configuration show that both types of diodes are able to follow the base-carrier frequency of 13.56 MHz which is essential for viable radio-frequency-identification (rf-ID) tags. Based on those results we evaluate the performance limits and advantages of each diode configuration regarding their application in an organic rf-ID tag.

Published in:
Journal of Applied Physics  (Volume:99 ,  Issue: 11 )

Date of Publication: Jun 2006

Page(s):
114519 - 114519-7
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.2202243
Date of Current Version :
18 June 2009
Issue Date :
Jun 2006

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.