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High spatial resolution mapping of partially strain-compensated SiGe:C films in the presence of postannealed defects

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6 Author(s)
Darahanau, A.V. ; School of Physics, Monash University, Victoria 3800, Australia ; Benci, A. ; Nikulin, A.Y. ; Etheridge, J.
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An experimental-analytical technique for the model-independent nondestructive characterization of single-crystal alloys is applied to partially strain-compensated SiGe:C/Si single layer structures with high concentrations of Ge. The studies were performed on pre- and postannealed SiGe:C/Si samples. X-ray Bragg diffraction profiles were collected at a synchrotron radiation source near the absorption edge of Ge. The studies have allowed the reconstruction of the complex crystal structure factor as a function of crystal depth, permitting direct observation of the effect of the thermal annealing on lattice strain and structural composition in the SiGe:C layer. The technique was shown to be applicable to the analysis of both perfect crystals and crystal structures containing a low defect concentration.

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Journal of Applied Physics  (Volume:99 ,  Issue: 11 )