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Improving fatigue resistance of Pb(Zr,Ti)O3 thin films by using PbZrO3 buffer layers

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4 Author(s)
Mensur Alkoy, Ebru ; Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan ; Uchiyama, K. ; Shiosaki, T. ; Alkoy, Sedat

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Ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films with PbZrO3 (PZ) buffer layers were prepared on Pt(111)/Ti/SiO2/Si(100) substrates using a hybrid rf magnetron sputtering and sol-gel process. Texture of PZT films was found to depend on Pb content of PZ buffer layers. Buffered PZT films displayed comparable ferroelectric properties (2Pr=38–53 μC/cm2,2Ec=136–170 kV/cm) with unbuffered PZT. Asymmetric leakage current and fatigue behavior with superior fatigue resistance was observed in PZ buffered PZT compared to unbuffered films. PZ buffer layers were found to affect crystallization and texture of PZT, and act as a capacitive interface layer possibly blocking charge injection from electrodes.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 10 )