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Interface effects in highly oriented films of the Heusler alloy Co2MnSi on GaAs(001)

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7 Author(s)
Singh, L.J. ; Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom ; Barber, Z.H. ; Kohn, A. ; Petford-Long, A.K.
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Highly (001) oriented thin films of Co2MnSi have been grown on lattice-matched GaAs(001) without a buffer layer. Stoichiometric films grown at the highest substrate temperature of 689 K showed the lowest resistivity (33 μΩ cm at 4.2 K) and the lowest coercivity (14 Oe). Twofold in-plane magnetic anisotropy was observed due to the inequivalence of the <110> directions, and this was attributed to the nature of the bonding at the reconstructed GaAs surface. Interfacial reactions resulted in the formation of an epitaxial Mn-As region and a thin interfacial layer that was Co-Ga rich. This prevented the desired lattice matching and resulted in films with a saturation magnetization slightly below the bulk value. In spite of this, the spin polarization of the free surface was measured to be 55%, similar to bulk material.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 1 )

Date of Publication:

Jan 2006

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