By Topic

Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Lee, H.S. ; Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan ; Yamaguchi, M. ; Ekins-Daukes, N.J. ; Khan, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2115095 

Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al0.08Ga0.92)0.52In0.48P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm-1, which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (Eν+0.90±0.05 eV) was observed. The changes in carrier concentrations (Δp) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39 cm-1, of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1 cm-1, in p-AlInGaP. From the minority-carrier injection annealing (100 mA/cm2), the annealing activation energy of H2 defect is ΔE=0.60 eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (Vp-Pi). The recovery of defect concentration and carrier concentration in the irradiated p-AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center.

Published in:

Journal of Applied Physics  (Volume:98 ,  Issue: 9 )