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Solid-phase epitaxial regrowth of amorphous layers in Si(100) created by low-energy, high-fluence phosphorus implantation

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3 Author(s)
Ruffell, S. ; Department of Physics and Astronomy, University of Western Ontario, London, Ontario, N6A 3K7, Canada ; Mitchell, I.V. ; Simpson, P.J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2113409 

Medium energy ion scattering has been used to study the kinetics of solid-phase epitaxial regrowth (SPEG) of ultrathin amorphous layers formed by room-temperature implantation of 5 keV energy phosphorus ions into Si (100). The implants create P distributions with peak concentrations up to ∼7×1021 cm-3. SPEG has been driven by rapid thermal annealing, 475 °C≤TA≤600 °C, for times up to 2000 s. At each temperature, the regrowth velocity is enhanced in the early stages due to the presence of phosphorus but then slows sharply to a value more than an order of magnitude below the intrinsic rate. The critical phosphorus concentration at the transition point for TA=475 °C regrowth is ∼6×1020 cm-3 and increases steadily with anneal temperature. Time-of-flight secondary ion mass spectroscopy profiles confirm the onset of phosphorus push out, where the advancing recrystallization front enters the transition region. Supplementary cross-sectional transmission electron microscopy evidence confirms the existence of a local strain field.

Published in:

Journal of Applied Physics  (Volume:98 ,  Issue: 8 )

Date of Publication:

Oct 2005

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