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Light-output enhancement of GaN-based light-emitting diodes by using hole-patterned transparent indium tin oxide electrodes

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5 Author(s)
Leem, Dong-Seok ; Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea ; Cho, Jaehee ; Sone, Cheolsoo ; Park, YongJo
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We have demonstrated the improvement of the light-output power of GaN-based light-emitting diodes (LEDs) using hole-patterned indium tin oxide (ITO) p-type electrodes. Hole patterns were defined by a laser holographic lithography combined with a postlithography deposition process. It is shown that near-UV LEDs made with the patterned ITO with a hole period of 710 nm and a size of 320 nm give 23% and 67% higher light-output power (at 20 mA) than those of LEDs with unpatterned ITO and Ni/Au contacts, respectively. It is further shown that the reduction of the hole period results in an additional improvement of light-output power.

Published in:

Journal of Applied Physics  (Volume:98 ,  Issue: 7 )

Date of Publication:

Oct 2005

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