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Low-frequency Raman scattering of Ge and Si nanocrystals in silica matrix

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6 Author(s)
Yang, Y.M. ; National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People''s Republic of China ; Wu, X.L. ; Yang, L.W. ; Huang, G.S.
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Ge and Si nanocrystals (nc-Ge and nc-Si) with average sizes in the range of 2–7 nm, embedded in silica matrix, were fabricated for investigating their acoustic-phonon vibrational properties. The freely elastic sphere theory was found to be unsuitable for explaining the low-frequency phonon vibration character of both nc-Ge and nc-Si in our current experiments. We have assigned the observed low-frequency Raman peaks to “LA-like mode” and “TA-like mode” in terms of their polarization and depolarization behaviors. In addition, it is revealed that the lattice contraction phenomenon exists in nc-Ge and nc-Si with sizes smaller than 4 nm, which leads to a contrary effect against matrix traction on the phonon vibrational frequencies.

Published in:

Journal of Applied Physics  (Volume:98 ,  Issue: 6 )