By Topic

Fast neutron irradiation induced clusters in silicon-single-crystals, using X-ray diffraction

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Halmagean, E. ; Res. Inst. for Electron. Components, Bucharest, Romania ; Birau, O. ; Ciuhandu, A. ; Udrea-Spenea, M.

Clusters induced as effects of exposing silicon single-crystals in fast neutron reactor ambiant are studied as a damage phenomenon used in inducing well controlled and reproducible effects to be used in semiconductor materials and device technology. Single-silicon-crystal X-ray diffraction has become a well-established branch of X-ray crystallography. Widely used as a method of investigation of bulk structural properties, it can also be used as a powerful tool in revealing by visualization silicon crystal lattice defects such as fast neutron reactor irradiation induced clusters. This paper is an original contribution in this field using X-ray topography as an investigation tool

Published in:

Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International

Date of Conference:

11-14 Oct 1995