By Topic

Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Barba, D. ; Centre de Recherche en Nanofabrication et en Nanocaractérisation, Université de Sherbrooke, Sherbrooke, Canada J1K 2R1 ; Salem, B. ; Morris, D. ; Aimez, V.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2033143 

Photoluminescence, time-resolved photoluminescence, and Raman characterization techniques have been used to study In0.73Ga0.27As0.57P0.43/In0.53Ga0.47As/InP single quantum well heterostructure after 20-keV phosphorus ion implantation followed by rapid thermal annealing. The annealing process induces intermixing in the heterostructures and results in the blueshift of the quantum well peak emission. In order to investigate ion channeling effects on this band-gap tuning process, room-temperature implantations have been performed at tilt angles of 0° and 7° with respect to the sample (001)-growth axis. We show that the ion channeling increases the blueshift from 24 to 42 nm, while it reduces both the density of the nonradiative defects within the active layer and the structure disordering. These features are attributed to the nature of the damage generated by channeled ions. The band-gap increase observed in the sample implanted at 0° is consistent with the formation of a compressive strain at the barrier/quantum well interface, whose intensity is measured by Raman spectroscopy.

Published in:

Journal of Applied Physics  (Volume:98 ,  Issue: 5 )