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Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP

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7 Author(s)
Barba, D. ; Centre de Recherche en Nanofabrication et en Nanocaractérisation, Université de Sherbrooke, Sherbrooke, Canada J1K 2R1 ; Salem, B. ; Morris, D. ; Aimez, V.
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Photoluminescence, time-resolved photoluminescence, and Raman characterization techniques have been used to study In0.73Ga0.27As0.57P0.43/In0.53Ga0.47As/InP single quantum well heterostructure after 20-keV phosphorus ion implantation followed by rapid thermal annealing. The annealing process induces intermixing in the heterostructures and results in the blueshift of the quantum well peak emission. In order to investigate ion channeling effects on this band-gap tuning process, room-temperature implantations have been performed at tilt angles of 0° and 7° with respect to the sample (001)-growth axis. We show that the ion channeling increases the blueshift from 24 to 42 nm, while it reduces both the density of the nonradiative defects within the active layer and the structure disordering. These features are attributed to the nature of the damage generated by channeled ions. The band-gap increase observed in the sample implanted at 0° is consistent with the formation of a compressive strain at the barrier/quantum well interface, whose intensity is measured by Raman spectroscopy.

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Journal of Applied Physics  (Volume:98 ,  Issue: 5 )