By Topic

Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Derluyn, J. ; Interuniversity Micro Electronics Center – Microsystems, Components and Packaging Division (IMEC–MCP), Kapeldreef 75, B-3001 Leuven, Belgium ; Boeykens, S. ; Cheng, K. ; Vandersmissen, R.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2008388 

We have made AlGaN/GaN high electron mobility transistors with a Si3N4 passivation layer that was deposited in situ in our metal-organic chemical-vapor deposition reactor in the same growth sequence as the rest of the layer stack. The Si3N4 is shown to be of high quality and stoichiometric in composition. It reduces the relaxation, cracking, and surface roughness of the AlGaN layer. It also neutralizes the charges at the top AlGaN interface, which leads to a higher two-dimensional electron-gas density. Moreover, it protects the surface during processing and improves the Ohmic source and drain contacts. This leads to devices with greatly improved characteristics.

Published in:

Journal of Applied Physics  (Volume:98 ,  Issue: 5 )