By Topic

Tailoring of high-temperature photoluminescence in InAs/GaAs bilayer quantum dot structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Mazur, Yu.I. ; Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 ; Wang, Zh.M. ; Tarasov, G.G. ; Kunets, Vas.P.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2039271 

Temperature-dependent photoluminescence is investigated in bilayer InAs/GaAs quantum dot structures with constant InAs deposition θ1 in the seed layer, but variable deposition θ2 in both the second layer and the GaAs spacer layer. It is shown that interlayer coupling, leading to the formation of asymmetric quantum dot pairs, strengthens the high-temperature photoluminescence and strongly influences carrier relaxation channels. We report that radiative recombination and carrier capture efficiency by the quantum dots in the second layer can be tailored using the deposition θ2 and the GaAs spacer thickness.

Published in:

Journal of Applied Physics  (Volume:98 ,  Issue: 5 )