Cart (Loading....) | Create Account
Close category search window
 

Characterization of remote inductively coupled CH4N2 plasma for carbon nitride thin-film deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Seo, Hyungtak ; Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, 27695-7911, North Carolina ; Kim, Jung-Hyung ; Chung, Kwang-Hwa ; Kim, Ju Youn
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2032617 

We investigated reaction characteristics in a CH4/N2 plasma for deposition of amorphous CNx thin films (a-CNx) by evaluating the change in electron density using the wave cutoff method, and the behavior of ions and radicals with an optical emission spectroscopy (OES). An inductively coupled plasma source that was 30 cm away from the substrate stage was used for the discharge. The change in electron density in the substrate region and OES spectra in the plasma-source region were evaluated to investigate both the reaction mechanism and the remote effect while varying process conditions such as rf power, pressure, and gas-mixing ratio. We found that the electron density in the remote CH4/N2 plasma was closely related to recombination reactions of major ions such as N2+, CH4+, CH3+, and H2+ during diffusion from the plasma source to the substrate. The electron density and optical emission of major ions and radicals in the CH4/N2 plasma increase at higher rf power. The ratio [N]/([N]+[C]) in a-CNx films, as measured by auger electron spectroscopy, also increases with rf power since more excited N and C species are gen- erated. For increasing pressure, the change in electron density and emission spectra showed different behavior, which arose from recombination of ions that generated more CH4, Nx (x=1,2), and CN radicals. The majority of positive ions generated from N2 species are greatly affected by the remote effect, while the majority of positive ions generated from CH4 species are not significantly influenced, since each species has different losses dependent on the pressure. A higher N2 gas fraction in the gas mixture generated more CN radicals, which resulted not only in more N incorporated into a-CNx films but also to a reduction of H passivation that retards formation of hybrid bonding between C and N in the films. These results suggest that efficient H abstraction is required to achieve more NC triple bonding in CH4/N2 plasma deposition.

Published in:

Journal of Applied Physics  (Volume:98 ,  Issue: 4 )

Date of Publication:

Aug 2005

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.