By Topic

A porous silicon diode as a source of low-energy free electrons at milli-Kelvin temperatures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Pilla, S. ; Department of Physics, University of California, San Diego, California 92093 ; Naberhuis, B. ; Goodkind, J.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have developed a porous silicon (PS) diode that yields free-electron currents with energies ≪0.1 eV below 77 K. The power dissipated during emission is low so that pulses of electrons can be produced below 100 mK without raising the temperature of the system. Free electrons were generated in liquid 4He and 3He as well. The device was developed as a source of electrons for a quantum computing system using electrons on the surface of a dielectric film. The results suggest that a Poole-Frenkel type of mechanism accounts for the observed electric-field-enhanced conduction but the electron emission mechanism is not well understood in the present models of PS.

Published in:

Journal of Applied Physics  (Volume:98 ,  Issue: 2 )