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Temperature and electric-field dependences of hole mobility in light-emitting diodes based on poly [2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene]

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6 Author(s)
Kumar, Amit ; Department of Electronic Science, University of Delhi South Campus, New Delhi, India 110021 ; Bhatnagar, P.K. ; Mathur, P.C. ; Husain, M.
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The current-voltage characteristics of poly [2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene] (MEH-PPV)-based hole-only light-emitting diodes are measured as a function of temperature. The hole current is found to be space-charge limited, providing a direct measure of the mobility as a function of temperature and electric field. A thermal activation energy of 0.2 eV is obtained for the zero-field mobility, with a room-temperature low-field mobility value for holes of 3.3×10-7 cm2/V s. The hole mobility exhibits field dependence in accordance with the Poole-Frenkel effect. The combination of space-charge effects and field-dependent mobility thus provides a consistent description of hole transport as a function of temperature and bias voltage in MEH-PPV films.

Published in:

Journal of Applied Physics  (Volume:98 ,  Issue: 2 )

Date of Publication:

Jul 2005

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