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Modeling of anomalous hysteresis behavior of compositionally graded ferroelectric films at low fields

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2 Author(s)
Wong, C.K. ; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China ; Shin, F.G.

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We study the hysteresis behavior of compositionally graded ferroelectric films by theoretical simulations. Anomalous vertical (polarization) shift behavior of hysteresis loops measured by a Sawyer-Tower circuit at low/medium applied fields is investigated. The anomalous ferroelectric response is discussed by the use of a multilayer model to account for the variation of properties across the film thickness. Electrical conductivities of the ferroelectric layers have been taken into account and time-dependent space-charge-limited conduction has been adopted. The effects of charge mobility and the amplitude of applied field on the D-E loop shift were examined. Theoretical calculations are discussed in relation to the experimental data from previous works.

Published in:

Journal of Applied Physics  (Volume:98 ,  Issue: 2 )