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Printed thin-film transistors and complementary logic gates that use polymer-coated single-walled carbon nanotube networks

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6 Author(s)
Hur, Seung-Hyun ; Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801; Beckman Institute and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801; and Center for Advanced Functional Polymers, Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, 373-1, Korea ; Kocabas, Coskun ; Gaur, A. ; Park, O.O.
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This paper reports on the electrical properties of thin-film transistors (TFTs) that use polymer-coated networks of single-walled carbon nanotubes (SWNTs) as the semiconductor with source and drain electrodes formed by high-resolution printing techniques. P-channel, n-channel, and ambipolar TFTs are demonstrated with bare SWNT networks, networks coated with polyethylene imine and with polyethylene oxide, respectively. Studies of the scaling of properties with channel length and tube density reveal important information about the operation of these devices. Complementary inverters made with n- and p-channel devices show gain larger than one and illustrate the potential use of these types of TFTs for complex logic circuits.

Published in:

Journal of Applied Physics  (Volume:98 ,  Issue: 11 )