By Topic

Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
OReilly, L. ; Nanomaterials Processing Laboratory, Research Institute for Networks and Communications Engineering (RINCE), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland ; Lucas, O.F. ; McNally, P.J. ; Reader, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2138799 

We have probed the luminescence properties of a wide-band-gap, direct band-gap optoelectronic material, grown on closely lattice-matched silicon substrates, namely, γ-CuCl on Si. This material system is compatible with current Si or GaAs-based electronic/optoelectronic technologies. Polycrystalline epitaxy of CuCl can be controlled such that it maintains an orientation similar to the underlying Si substrate. Importantly, chemical interactions between CuCl and Si are eliminated. Photoluminescence and cathodoluminescence results for CuCl, deposited on either Si (100) or Si (111), reveal a strong room-temperature Z3 excitonic emission at ∼387 nm. We have developed and demonstrated the room-temperature operation of an ultraviolet electroluminescent device fabricated by the growth of γ-CuCl on Si. The application of an electrical potential difference across the device results in an electric field, which promotes light emission through hot-electron impact excitation of electron-hole pairs in the γ-CuCl. Since the excitonic binding energy in this direct band-gap material is of the order of 190 meV at room temperature, the electron-hole recombination and subsequent light emission at ∼380 and ∼387 nm are mediated by excitonic effects.

Published in:

Journal of Applied Physics  (Volume:98 ,  Issue: 11 )