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Spectroellipsometric approach to determine linear electro-optic coefficient of c-axis-oriented LiNbO3 thin films

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2 Author(s)
Akazawa, Housei ; NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan ; Shimada, Masaru

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2134889 

We present a simple method to determine the linear electro-optic coefficient of thin films with spectroscopic ellipsometry. This technique allows noncontact and nondestructive measurement of the as-grown state of films without the need to fabricate a waveguide. The principle behind this is that the electro-optic effect is regarded as perturbation to the optical parameters. Comparing differences in tan Ψ spectra in terms of applied voltage and wavelength yields a change in the effective wavelength of light propagating through a dielectric medium, which is equivalent to electro-optic-induced phase shift. We demonstrate the feasibility of this procedure to determine the Pockels coefficient (r33) of a preferentially c-axis-oriented LiNbO3 film on a Si(100) substrate. Dispersion of effective r33 values at wavelengths between 0.3 and 0.8 μm was obtained.

Published in:

Journal of Applied Physics  (Volume:98 ,  Issue: 11 )

Date of Publication:

Dec 2005

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