By Topic

Copper nitride thin film prepared by reactive radio-frequency magnetron sputtering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Yue, G.H. ; Institute for Plasma and Metal Materials, Lanzhou University, Lanzhou 730000, China ; Yan, P.X. ; Liu, J.Z. ; Wang, M.X.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Copper nitride (Cu3N) thin films were deposited on glass substrates by reactive radio-frequency magnetron sputtering of a pure copper target in a nitrogen/argon atmosphere. The deposition rate of the films gradually decreased with increasing nitrogen flow rate. The color of the deposited films was a reddish dark brown. The Cu3N films obtained by this method were strongly textured with crystal direction [100]. The grain size of the polycrystalline films ranged from 16 to 26 nm. The Hall effect of the copper nitride (Cu3N) thin films was investigated. The optical energy gap of the films was obtained from the Hall coefficient and found to vary with the nitrogen content. The surface morphology was studied by scanning electron microscopy and atomic force microscopy. The copper nitride thin films are unstable and decompose into nitrogen and copper upon heat treatment when annealed in vacuum with argon protected at 200 °C for 1 h.

Published in:

Journal of Applied Physics  (Volume:98 ,  Issue: 10 )