Cart (Loading....) | Create Account
Close category search window

Thermal conductivity of nitrogenated ultrananocrystalline diamond films on silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Shamsa, M. ; Nano-Device Laboratory, Department of Electrical Engineering, University of California-Riverside, Riverside, California 92521, USA ; Ghosh, S. ; Calizo, I. ; Ralchenko, V.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The authors report on the experimental investigation of the thermal conductivity of nitrogenated ultrananocrystalline diamond (UNCD) films on silicon. For better accuracy, the thermal conductivity was measured by using two different approaches: the method and transient “hot disk” technique. The temperature dependence of the thermal conductivity of the nitrogenated UNCD films was compared to that of undoped UNCD films and microcrystalline diamond (MCD) films on silicon. It was shown that the temperature dependence of the thermal conductivity of UNCD films, which is substantially different from that for MCD films, can be adequately described by the phonon-hopping model. The room-temperature thermal conductivity of UNCD is 8.6–16.6 W/mK and decreases with the addition of nitrogen. The obtained results shed light on the nature of thermal conduction in partially disordered nanostructured materials and can be used for estimating the thermal resistance of doped UNCD films.

Published in:

Journal of Applied Physics  (Volume:103 ,  Issue: 8 )

Date of Publication:

Apr 2008

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.