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Tunneling spectroscopy in Fe/ZnSe/Ga1-xMnxAs magnetic tunnel diodes

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4 Author(s)
Saito, H. ; Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba, Ibaraki 305-8568, Japan ; Yamamoto, A. ; Yuasa, S. ; Ando, K.

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We performed tunneling spectroscopy in Fe/ZnSe/Ga1-xMnxAs magnetic tunnel diodes with a metal-insulator-semiconductor (MIS) structure. A GaAs-like longitudinal optical phonon mode was observed for the first time in M/I/Ga1-xMnxAs junctions. This implies a better quality with fewer defect states in a ZnSe barrier as compared to other barrier materials, such as AlAs and GaAs. The normalized conductance spectra reflect the density of states of Ga1-xMnxAs in MIS tunnel diodes, suggesting that direct tunneling is a major transport mechanism due to high-quality ZnSe barrier.

Published in:

Journal of Applied Physics  (Volume:103 ,  Issue: 7 )