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Growth and magnetic and electrical-transport properties of NiAs structured Mn1-xGaxAs thin films

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3 Author(s)
Song, J.H. ; Department of Physics, Chungnam National University, Daejeon 305-764, Korea ; Cui, Y. ; Ketterson, J.B.

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We have successfully fabricated epitaxial Mn1-xGaxAs thin films with the NiAs crystal structure on GaAs(001) substrates by molecular-beam epitaxy characterized by their magnetic and electrical-transport properties. For a sample with x=0.17, the magnetic Curie temperature (TC) was ∼340 K, which exceeds room temperature, and a high anisotropy in the M-H hysteresis loops was observed. Furthermore, the temperature dependence of the resistance shows a semiconducting behavior with an indication of an interplay between the charge carriers and localized magnetic ions. The magnetoresistance is different from that of a MnAs film, indicating a radical alteration of electronic structure by a partial substitution of Ga for Mn in NiAs structured MnAs.

Published in:

Journal of Applied Physics  (Volume:103 ,  Issue: 7 )