Cart (Loading....) | Create Account
Close category search window

Ferromagnetic resonance study of polycrystalline Fe1-xVx alloy thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Beaujour, J.M.L. ; Department of Physics, New York University, 4 Washington Place, New York, New York 10003, USA ; Kent, A.D. ; Abraham, D.W. ; Sun, J.Z.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Ferromagnetic resonance has been used to study the magnetic properties and magnetization dynamics of polycrystalline Fe1-xVx alloy films with 0≤x≪0.7. Films were produced by cosputtering from separate Fe and V targets, leading to a composition gradient across a Si substrate. Ferromagnetic resonance studies were conducted at room temperature with a broadband coplanar waveguide at frequencies up to 50 GHz using the flip-chip method. The effective demagnetization field 4πMeff and the Gilbert damping parameter α have been determined as a function of V concentration. The results are compared to those of epitaxial FeV films.

Published in:

Journal of Applied Physics  (Volume:103 ,  Issue: 7 )

Date of Publication:

Apr 2008

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.