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Performance of write-line inserted magnetic tunneling junction for low-write-current magnetic random access memory cell

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7 Author(s)
Honjo, H. ; Device Platforms Research Laboratories, NEC Corporation, Sagamihara, Kanagawa 229-1198, Japan ; Nebashi, R. ; Suzuki, T. ; Fukami, S.
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We have developed a write-line-inserted magnetic tunneling junction (MTJ) (WLIM) for use in low-write-current magnetoresistance random access memory (MRAM). The write current of the WLIM was reduced to 0.98 mA and its thermal stability factor was 85 for a 0.32×0.48 μm2 MTJ. We evaluated the switching property of the WLIM in an external magnetic field (Hsw_ext) and an internal magnetic field (Hsw_int). We found that Hsw_ext was larger than Hsw_int when the aspect ratio of the MTJs was less than 1.5. Furthermore, we obtained a high write-current magnetic-field efficiency of 13.0 Oe/mA when the aspect ratio of the MTJs was low. These properties mean that the WLIM structure has advantages for use in low-write-current MRAM.

Published in:

Journal of Applied Physics  (Volume:103 ,  Issue: 7 )