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Dependence of switching current distribution on current pulse width of current-induced magnetization switching in MgO-based magnetic tunnel junction

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6 Author(s)
Morota, Misako ; Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba 305-8568, Japan ; Fukushima, A. ; Kubota, H. ; Yakushiji, K.
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Current-induced magnetization switching in an MgO-based magnetic tunnel junction (MTJ) was experimentally studied. Probabilistic distribution of a switching current was measured at various current pulse widths from 5 μs to 100 ms. A thermal stability parameter Δ of a free-layer magnetic moment and an intrinsic switching current density Jc0 of the MTJ were evaluated from the switching current distribution using a thermal activation model. The estimated Δ and Jc0 were approximately independent of the pulse width and were in good agreement with the values estimated from the pulse-width dependence of the switching current density, demonstrating the validity of the thermal activation model.

Published in:
Journal of Applied Physics  (Volume:103 ,  Issue: 7 )

Date of Publication: Apr 2008

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