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Metal oxide semiconductor structure and transistor behaviour using a single and simple graph (Qψ) which takes into account all the physical and electrical parameters

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1 Author(s)
Vincent, Gilbert ; Physics Department, Joseph Fourier University, Isere F-38054 Grenoble 9, France

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2885119 

Physical properties and electrical characteristics of the metal oxide semiconductor (MOS) structure and the MOS transistor depend on numerous parameters: doping and permittivity of the semiconductor, thickness, permittivity and charge of the oxide, temperature, and, obviously, gate, drain, and substrate voltages. In this paper, we propose a single and simple graph to visualize and highlight the impact of all these physical and electrical parameters. All main classical relationships can be easily deduced from this graph, which is an additional efficient tool to understand MOS device behaviors.

Published in:

Journal of Applied Physics  (Volume:103 ,  Issue: 7 )