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Structural and electrical characterization of AuPtAlTi Ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

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10 Author(s)
Fay, M.W. ; School of Mechanical, Materials, Manufacturing Engineering and Management, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom ; Han, Y. ; Brown, P.D. ; Harrison, I.
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The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN Ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity, and contact resistance is examined. In particular, the presence of a detrimental low temperature Pt–Al reaction is identified. This is implicated in both the requirement for a higher Al:Ti ratio than is required for related AuPdAlTi contact schemes and through the degraded temperature dependent resistance behaviour of the annealed AuPtAlTi contacts.

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Journal of Applied Physics  (Volume:103 ,  Issue: 7 )