By Topic

Structural and electrical characterization of AuPtAlTi Ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Fay, M.W. ; School of Mechanical, Materials, Manufacturing Engineering and Management, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom ; Han, Y. ; Brown, P.D. ; Harrison, I.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2890978 

The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN Ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity, and contact resistance is examined. In particular, the presence of a detrimental low temperature Pt–Al reaction is identified. This is implicated in both the requirement for a higher Al:Ti ratio than is required for related AuPdAlTi contact schemes and through the degraded temperature dependent resistance behaviour of the annealed AuPtAlTi contacts.

Published in:

Journal of Applied Physics  (Volume:103 ,  Issue: 7 )