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High temperature thermoelectric transport properties of p-type Ba8Ga16AlxGe30-x type-I clathrates with high performance

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4 Author(s)
Deng, Shukang ; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, People’s Republic of China ; Tang, Xinfeng ; Li, Peng ; Qingjie Zhang

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Using group-III atom Al as doping element, Ba8Ga16AlxGe30-x (x=1.0, 2.0, 3.0, 4.0, and 5.0) type-I clathrates with different Al content were synthesized by combining melting reaction with spark plasma sintering method. The effects of Al content on thermoelectric properties are investigated. X-ray diffraction patterns and Rietveld analysis reveal that the compounds prepared by this method are type-I clathrates and Al atom preference for the 6c site. The Al substitutions do not affect the atomic displacement parameters (ADPs) of framework atoms (Ge/Ga) and filled atoms (Ba) compared to that of Ba8Ga16Ge30, and the ADPs of Al are nearly equivalent to that of other framework Ge/Ga atoms. All specimens exhibit the behavior of the p-type conduction. The carrier concentration and electrical conductivity increase while Seebeck coefficient decreases with the increasing Al content for the specimens with ≤4.0. Ba8Ga16Al3.0Ge27.0 compound possesses the relatively lower lattice thermal conductivity κL due to the mass fluctuation between Al atoms and other atoms in the framework; it is as low as 0.96 W/mK at 300 K. The maximum ZT value of 0.61 is obtained at 760 K for Ba8Ga16Al3.0Ge27.0.

Published in:

Journal of Applied Physics  (Volume:103 ,  Issue: 7 )