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Nanoelectronic logic device based on the manipulation of magnetic and electric barriers

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5 Author(s)
Kumar, S.Bala ; Information Storage Materials Laboratory, Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 ; Tan, S.G. ; Jalil, M.B.A. ; Cheung, P.Q.
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We propose a programmable logic device that utilizes magnetoelectric (ME) barriers to realize Boolean functions. We use a high-electron-mobility-transistor in which electron transport in the two-dimensional-electron-gas channel is modulated by applied ME potential barriers via a combination of periodic ferromagnetic and nonmagnetic gates. Electron transmission through the device is calculated based on the minimal-coupling Hamiltonian. The device can be programmed to realize multiple three-input, logic functions, such as OR, AND, NAND, and NOR. The binary logic output of 1/0 corresponds, respectively, to the high/low transmission of electrons through the externally applied barriers. The calculation results show clear binary outputs, with a high (low) state having a transmission probability of T≫80% (T≪20%). We also studied the effect of varying gate lengths on T.

Published in:

Journal of Applied Physics  (Volume:103 ,  Issue: 5 )