Cart (Loading....) | Create Account
Close category search window

Ni/Al0.2Ga0.8N interfacial reaction and Schottky contact formation using high quality epitaxial layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Boudjelida, B. ; Materials and Engineering Research Institute, Sheffield Hallam University, Pond Street, Sheffield S1 1WB, United Kingdom ; Gee, I. ; Evans-Freeman, J. ; Clark, S.A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The formation of the Ni/Al0.2Ga0.8N Schottky contacts has been investigated by x-ray photoelectron spectroscopy. In situ scanning tunneling microscopy was used in parallel to investigate the morphology of the Ni covered surface after the last deposition. In the same way, results are presented through two perspectives: the intensity of core-level signals which give information on the growth mode, and the core-level binding energy positions which assess changes in electronic and chemical properties as a function of Ni coverage. Ni deposition on Al0.2Ga0.8N substrates follows the Stranski–Krastanov growth mode. It is suggested that Ni preferably reacts with the contaminants at the surface rather than with the epilayer itself. The Schottky barrier formation is discussed in terms of unified defect and metal-induced gap states models.

Published in:

Journal of Applied Physics  (Volume:103 ,  Issue: 5 )

Date of Publication:

Mar 2008

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.