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Investigation of the V-pit related morphological and optical properties of InGaN/GaN multiple quantum wells

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5 Author(s)
Lin, F. ; Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 ; Xiang, N. ; Chen, P. ; Chow, S.Y.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2884534 

In this work, the effects of large V-pits on the morphological and optical properties of InGaN/GaN multiple quantum wells (MQWs) were studied using scanning electron microscopy, transmission electron microscopy, and photoluminescence. InGaN/GaN MQWs with high-density large V-pits were grown by metal organic chemical vapor deposition. In addition to the regular c-plane MQWs, the MQWs grown on the {1011} faceted sidewalls of the V-pits were also observed, which gave much higher emission energies than those of the c-plane MQWs. Furthermore, when the low-temperature GaN buffer was very thin, the {112m} (m≥2) faceted sidewalls of the V-pits were observed. It was then found that MQWs grown on such sidewalls had emission energies between those of the c-plane MQWs and those of the {1011} faceted sidewall MQWs.

Published in:

Journal of Applied Physics  (Volume:103 ,  Issue: 4 )

Date of Publication:

Feb 2008

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