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Effects of nitrogen content on the structure and electrical properties of high-k NdOxNy gate dielectrics

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3 Author(s)
Tung-Ming Pan ; Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan, Republic of China ; Hou, Sung-Ju ; Wang, Chih-Hwa

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This paper describes the structure and electrical properties of thin NdOxNy gate dielectrics deposited on Si(100) substrates through reactive rf sputtering. Atomic force microscopy and x-ray photoelectron spectroscopy were used to study the morphological and chemical features of these films as functions of the growth conditions (argon-to-nitrogen flow ratios of 20/5, 15/10, 10/15, and 5/20; temperatures ranging from 600 to 800 °C). The NdOxNy gate dielectric prepared under an Ar/N2 flow ratio of 10/15 with subsequent annealing at 700 °C exhibited the smallest capacitance equivalent thickness and the best electrical characteristics (gate leakage current, interface-trapped charge, and hysteresis voltage in the capacitance-voltage curves). We attribute this behavior to the optimal nitrogen content in this metal oxide film suppressing the amorphous silica and silicate at the NdOxNy/Si interface and forming a smooth surface.

Published in:

Journal of Applied Physics  (Volume:103 ,  Issue: 12 )