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Site modification in BiFeO3 thin films studied by Raman spectroscopy and piezoelectric force microscopy

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2 Author(s)
Wang, Yao ; Department of Materials Science and Engineering and State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China ; Nan, Ce-Wen

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Site modification in BiFeO3 films was investigated using Raman spectroscopy and piezoelectric force microscopy to explore effect of A- and B-site modifications on structural evolution and ferroelectric behavior of doped BiFeO3 films. Our Raman results revealed the subtle structural changes in the BiFeO3 films caused by the changes of the short-range force in the crystal lattice induced by ionic radii mismatch. The observation of ferroelectric domain and the control of domain switching through an electric field in these doped BiFeO3 films were realized by piezoelectric force microscopy. Piezoelectric response of these doped BiFeO3 films illustrated dependence of their properties upon the lattice symmetry and film microstructure.

Published in:

Journal of Applied Physics  (Volume:103 ,  Issue: 11 )

Date of Publication:

Jun 2008

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