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Manipulation of quantum interference effects in La0.39Pr0.28Ca0.33MnO3-δ by p-n junction at high temperature

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7 Author(s)
Wang, C. ; Research Institute of Engineering and Technology, Yunnan University, Kunming 650091, People’s Republic of China ; Yang, Y. ; Li, Z.F. ; Chen, X.S.
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Manipulation of the magnetoresistance mechanism-quantum interference effects (QIEs) is achieved by controlling the hole density in a La0.39Pr0.28Ca0.33MnO3-δ depletion layer with the application of different biases to the La0.39Pr0.28Ca0.33MnO3-δ/SrNbTiO3 p-n junction. The positive magnetoresistance (PMR) induced by QIEs has been tuned up to tenfold with a suitable bias voltage applied to this manganite/titanate p-n junction. Compared to the recent breakthrough achieved on Fe1-xCoxSi [N. Manyala etal, Nature (London) 404, 581 (2000)], the working temperature for QIEs has been increased from 30 to 150 K, and the maximal PMR ratio has been enhanced from 10% to 96% under 1 T at 25 K. The maximal PMR can be obtained by tuning the hole density via the bias voltage within 2 V. It is clearly demonstrated that the carrier density strongly affects the QIEs in the manganites.

Published in:

Journal of Applied Physics  (Volume:103 ,  Issue: 10 )