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Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing

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8 Author(s)
Liu, Fangyue ; Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore ; Kian-Ming Tan ; Wang, Xincai ; Low, David Kuang Yong
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2812565 

The supersaturated and metastable boron produced by laser anneal could deactivate during post-laser-thermal-cycles and lead to undesirable performance degradation. The effect of tin incorporation on the thermal stability of boron was studied for the first time and suppressed boron deactivation during post-laser-rapid-thermal-anneal was observed with tin coimplantation. High resolution x-ray diffraction measurement indicates that the tensile strain caused by a high boron concentration was reduced by the introduction of tin, which effectively reduces the strain energy and therefore, enhances the thermal stability of boron in post-laser-anneal rapid thermal processing.

Published in:
Journal of Applied Physics  (Volume:102 ,  Issue: 9 )

Date of Publication: Nov 2007

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