The effects of phosphorous gettering and hydrogenation on the minority carrier recombination at crystal defects in directionally solidified multicrystalline silicon are described. Representative industrial wafers, both p- and n-type, and current technologies for the gettering and hydrogenation are used. The main result of this work is a strong link between activation of extended crystal defects (ECDs) by gettering and their passivation by hydrogenation. It is shown that gettering or annealing increases the recombination at active as well as inactive ECDs. Surprisingly, hydrogenation can neutralize this change in activity due to the gettering. However, it neutralizes only part, at most, of the ECD activity already present before the gettering. Therefore, under current industrial processing techniques, these two high-temperature process steps individually give large change but together much less net change of the crystal defect activity. Related phenomena are observed in wafers with strongly varying impurity concentration. Finally, there is little difference in these observations between n- and p-type wafers.