By Topic

Hole mobility in silicon inversion layers: Stress and surface orientation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Sun, Guangyu ; Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, USA ; Sun, Yongke ; Nishida, Toshikazu ; Thompson, S.E.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Hole transport in the p-type metal-oxide-semiconductor field-effect-transistor (p-MOSFET) inversion layer under arbitrary stress, surface, and channel orientation is investigated by employing a six-band kp model and finite difference formalism. The piezoresistance coefficients are calculated and measured at stresses up to 300 MPa via wafer-bending experiments for stresses of technological importance: uniaxial and biaxial stresses on (001) and (110) surface oriented p-MOSFETs with <110> and <111> channels. With good agreement in the measured and calculated small stress piezoresistance coefficients, kp calculations are used to give physical insights into hole mobility enhancement at large stress (∼3 GPa). The results show that the maximum hole mobility is similar for (001)/<110>, (110)/<110>, and (110)/<111> p-MOSFETs under uniaxial stress, although the enhancement factor is different. Strong quantum confinement and a low density of states cause less stress-induced mobility enhancement for (110) p-MOSFETs. For (001) p-MOSFETs, the dominant factor for the improved hole mobility is reduced conductivity effective mass at small stress and lower phonon scattering rate at large stress.

Published in:

Journal of Applied Physics  (Volume:102 ,  Issue: 8 )