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Nanoscale phase separation in ultrafast pulsed laser deposited arsenic trisulfide (As2S3) films and its effect on plasma etching

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5 Author(s)
Choi, Duk-Yong ; Centre for Ultrahigh Bandwidth Devices for Optical Systems, Laser Physics Centre, Research School of Physical Science and Engineering, The Australian National University, Canberra 0200, Australia ; Madden, Steve ; Rode, A. ; Wang, Rongping
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2798936 

We have observed nanoscale phase separation in amorphous arsenic trisulfide (As2S3) films produced by ultrafast pulsed laser deposition and its effect on the surface morphology of the film after plasma etching. When the film was etched in CF4O2 plasma, a grainy structure was observed on the surface. From Raman and x-ray photoelectron spectroscopies, we concluded that the grainy structure of the etched surfaces comes from the differential chemical attack between different phases in the film.

Published in:

Journal of Applied Physics  (Volume:102 ,  Issue: 8 )

Date of Publication:

Oct 2007

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