Cart (Loading....) | Create Account
Close category search window
 

Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Langereis, E. ; Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands ; Knoops, H.C.M. ; Mackus, A.J.M. ; Roozeboom, F.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2798598 

Remote plasma atomic layer deposition (ALD) of TaNx films from Ta[N(CH3)2]5 and H2, H2-N2, and NH3 plasmas is reported. From film analysis by in situ spectroscopic ellipsometry and various ex situ techniques, data on growth rate, atomic composition, mass density, TaNx microstructure, and resistivity are presented for films deposited at substrate temperatures between 150 and 250 °C. It is established that cubic TaNx films with a high mass density (12.1 g cm-3) and low electrical resistivity (380 μΩ cm) can be deposited using a H2 plasma with the density and resistivity of the films improving with plasma exposure time. H2-N2 and NH3 plasmas resulted in N-rich Ta3N5 films with a high resistivity. It is demonstrated that the different TaNx phases can be distinguished in situ by spectroscopic ellipsometry on the basis of their dielectric function with the magnitude of the Drude absorption yielding information on the resistivity of the films. In addition, the saturation of the ALD surface reactions can be determined by monitori- ng the plasma emission, as revealed by optical emission spectroscopy.

Published in:

Journal of Applied Physics  (Volume:102 ,  Issue: 8 )

Date of Publication:

Oct 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.