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Effects of high-temperature anneals and 60Co gamma-ray irradiation on strained silicon on insulator

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10 Author(s)
Park, K. ; School of Materials, Department of Electrical Engineering, and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287, USA ; Canonico, M. ; Celler, G.K. ; Seacrist, M.
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Strained silicon on insulator was exposed to high-temperature annealing and high-dose 60Co gamma (γ)-ray irradiation to study the tenacity of the bond between the strained Si film and the underlying buried oxide. During the high-temperature anneals, the samples were ramped at a rate of 150°C/s to 850°C then ramped to 1200, 1250, and 1300 °C at a rate of approximately 5×105 °C/s for millisecond duration anneals. For the irradiation experiments, the samples were irradiated with 60Co γ rays to a dose of 51.5 kGy. All samples were characterized by ultraviolet (UV) Raman, pseudo metal-oxide-semiconductor field-effect transistor (Ψ-MOSFET) current voltage, Hall mobility, and photoluminescence (PL) to verify changes in strain. UV Raman, PL, and Ψ-MOSFET measurements show no strain relaxation for the high-temperature annealed samples and only very slight relaxation for the γ-ray irradiated samples.

Published in:

Journal of Applied Physics  (Volume:102 ,  Issue: 7 )

Date of Publication:

Oct 2007

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