Cart (Loading....) | Create Account
Close category search window

Investigation of the emitter band gap widening of heterojunction solar cells by use of hydrogenated amorphous carbon silicon alloys

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Mueller, T. ; Chair of Electronic Devices, University of Hagen, Haldener Strasse 182, P.O. Box 940, D-58084 Hagen, Germany ; Duengen, W. ; Ma, Y. ; Job, R.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The hydrogenated amorphous carbon-silicon alloys [a-SixC1-x(n):Hy] and [a-Six(n):Hy] layers were investigated in order to prove the feasibility to widen the optical band gap in emitters of the heterojunction solar cells. The alloys were fabricated by decomposition of silane (SiH4), phosphine (PH3), methane (CH4), and hydrogen (H2), using a plasma enhanced chemical vapor deposition. Particularly, we focused on the incorporation of hydrogen and carbon within the resulting [a-SixC1-x(n):Hy] and [a-Six(n):Hy] films, which later form the emitter. The corresponding local vibrational modes of Si-Hx, C-H, and the corresponding network have been analyzed by μ-Raman spectroscopy. The addition of carbon degrades the photoelectronic properties in the emitter layer. This deterioration can be minimized by H dilution. The resulting optical band gap EG as well as the thickness of the emitter were determined by spectroscopic ellipsometry. It was confirmed that the band gap EG can be tailored by using an appropriate gas mixture during the decomposition. Furthermore, we analyzed the I-V characteristics of the prepared heterojunction solar cells. A trade-off between the electrical defects density and the optical losses induced an improvement of the I-V characteristics with increasing carbon and hydrogen concentration in the feedstock during the deposition.

Published in:

Journal of Applied Physics  (Volume:102 ,  Issue: 7 )

Date of Publication:

Oct 2007

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.