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Effects of the high-temperature-annealed self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire substrates

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4 Author(s)
Koyama, T. ; Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira Aoba, Sendai 980-8577, Japan; Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan; and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan ; Fouda, A.N. ; Shibata, N. ; Chichibu, S.F.

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The use of the high-temperature-annealed self-buffer layer (HITAB) enabled to observe free A-and B-exciton emissions at 9 K from ZnO heteroepitaxial films grown by the sputtering epitaxy method using a helicon-wave-excited plasma on uniaxially nearly lattice-matched (1120) Al2O3 substrates. The result was correlated with a twofold decrease in the densities of threading dislocations having both the screw and edge components, according to the dislocation concealing in ZnO HITAB due to lateral mass transport of low-temperature deposited ZnO nanocrystalline grains during high temperature annealing.

Published in:

Journal of Applied Physics  (Volume:102 ,  Issue: 7 )