By Topic

Effect of multiquantum barriers on performance of InGaN/GaN multiple-quantum-well light-emitting diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Nee, Tzer-En ; Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan 333, Republic of China ; Wang, Jen-Cheng ; Shen, Hui-Tang ; Ya-Fen Wu

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2761824 

In this paper we demonstrate that the improvement in the emission intensity afforded by the introduction of multiquantum barrier (MQB) structures in an InGaN/GaN multiple-quantum-well (MQW) light-emitting diode (LED) is attributable to increased excitation cross sections. Over the temperature range from 300 to 20 K, the excitation cross sections of the MQW emissions possessing MQB structures were between 9.6×10-12 and 5.3×10-15 cm2, while those possessing GaN barriers were between 8.1×10-12 and 4.5×10-15 cm2. We found, however, that the figure of merit for the LED light output was the capture fraction of the cross section; we observed that the dependence of the optical intensity on the temperature coincided with the evolution of the capture fraction. This analysis permitted us to assign the capture cross-section ratios at room temperature for the MQWs with MQBs and with GaN barriers as 0.46 and 0.35. Furthermore, the MQW system possessing well-designed MQB structures not only exhibited the thermally insensitive luminescence but also inhibited energetic carrier overflow.

Published in:

Journal of Applied Physics  (Volume:102 ,  Issue: 3 )