Cart (Loading....) | Create Account
Close category search window
 

Effects of interface engineering for HfO2 gate dielectric stack on 4H-SiC

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Mahapatra, R. ; School of Electrical, Electronic and Computer Engineering, Newcastle University, Newcastle upon Tyne, NE1 7RU, United Kingdom ; Chakraborty, Amit K. ; Horsfall, A.B. ; Chattopadhyay, S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2756521 

HfO2 films were grown on SiO2/4H-SiC and SiON/4H-SiC layers by deposition of metallic Hf in an electron beam evaporation system followed by thermal oxidation. X-ray photoelectron spectroscopy confirmed the formation of stoichiometric HfO2 films. There is no evidence of formation of hafnium silicide or carbon pileup at the surface as well as at the interfacial layer. Electrical measurements show the presence of fewer trapped charges in the HfO2/SiON gate dielectric stack compared to HfO2/SiO2 stack with a comparable interface state density. The HfO2/SiON stack layer improves leakage current characteristics with a higher breakdown field and has smaller flatband voltage shift under electrical stress, indicating improved reliability.

Published in:

Journal of Applied Physics  (Volume:102 ,  Issue: 2 )

Date of Publication:

Jul 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.