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Oxide thickness dependence of swift heavy ion-induced surface tracks formation in silicon dioxide on silicon structures at grazing incidence

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8 Author(s)
Carvalho, A.M.J.F. ; IES, UMR-CNRS 5214, cc082, Université Montpellier 2, 34095 Montpellier cedex 5, France ; Touboul, A.D. ; Marinoni, M. ; Ramonda, M.
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The influence of the oxide thickness in the surface tracks formation in thin silicon dioxide layered-silicon substrate (SiO2-Si) irradiated with swift heavy ion is dealt with. In this respect, SiO2-Si samples with different oxide thicknesses have been characterized using atomic force microscopy before and after 7.51 MeV/u Xe ion irradiation at a grazing incident angle of relative to the surface plane. Experimental evidence of the existence of a threshold thickness in the formation of swift heavy ion-induced surface tracks has been addressed and discussed according to the thermal spike theory. This experimental upshot can be helpful when assessing metal–oxide–semiconductor ultrathin-gate oxide reliability issues and for growth of silicon-based nanostructures.

Published in:

Journal of Applied Physics  (Volume:102 ,  Issue: 12 )

Date of Publication:

Dec 2007

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