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Epitaxial growth of ultrahigh density Ge1-xSnx quantum dots on Si (111) substrates by codeposition of Ge and Sn on ultrathin SiO2 films

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5 Author(s)
Nakamura, Yoshiaki ; Quantum-Phase Electronics Center, Department of Applied Physics, School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan, and CREST, Japan Science and Technology Corporation, Japan ; Masada, Akiko ; Cho, Sung-Pyo ; Tanaka, Nobuo
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A method to form epitaxial Ge1-xSnx quantum dots (QDs) on Si (111) substrates has been developed by codeposition of Ge and Sn on ultrathin SiO2 films with predeposited Ge nuclei. Hemispherical Ge1-xSnx QDs with an ultrahigh density (∼1012 cm-2) were epitaxially grown in the nanometer-size range. The QD size was controlled by changing the GeSn deposition amount. High-resolution transmission electron microscopy observations revealed that the main formed Ge1-xSnx QDs had less strain and no misfit dislocations.

Published in:

Journal of Applied Physics  (Volume:102 ,  Issue: 12 )

Date of Publication:

Dec 2007

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